Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment

标题
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 9, Pages 911-913
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-07-14
DOI
10.1109/led.2015.2456034

向作者/读者发起求助以获取更多资源

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started