A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit

Published 2015 View Full Article

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Title
A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1091-1093
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-08-25
DOI
10.1109/led.2015.2472297

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