A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 10, Pages 1091-1093

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-08-25

DOI

10.1109/led.2015.2472297

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