Porous Formation in p-Type Gallium Nitride Films via 50 Hz Operated Alternating Current-Assisted Photo-Electrochemical Etching in Methanol-Sulfuric Acid Solution

Porous Quaternary Al0.1 In0.1 Ga0.8 N Film Formation via Photoelectrochemical Etching in HF:C2 H5 OH Electrolyte

(2016) Way Foong Lim et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Surface Alteration of Planar P-Type Gallium Nitride to Porous Structure Using 50 Hz Alternating Current-Assisted Photo-Electrochemical Etching Route

(2016) Hock Jin Quah et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy

(2015) Junji Murata et al.   ELECTROCHIMICA ACTA

Energy and economic benefits of LED adoption in Malaysia

(2015) Hasti Khorasanizadeh et al.   RENEWABLE & SUSTAINABLE ENERGY REVIEWS

Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes

(2015) Soo Hyun Lee et al.   SOLID-STATE ELECTRONICS

Microscopic origin of lattice contraction and expansion in undoped rutile TiO2nanostructures

(2014) Batakrushna Santara et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

(2013) Lee-Woon Jang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

A study of the optical bandgap energy and Urbach tail of spray-deposited CdS:In thin films

(2013) Shadia Jamil Ikhmayies et al.   Journal of Materials Research and Technology-JMR&T

Structure and luminescence properties of thermally nitrided Ga2O3 nanowires

(2012) Hyunsu Kim et al.   MATERIALS RESEARCH BULLETIN

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

(2011) Herwig Hahn et al.   Applied Physics Express

Influence of post-deposition annealing in oxygen ambient on metal–organic decomposed CeO2 film spin coated on 4H-SiC

(2011) Way Foong Lim et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

(2010) Shuang Qu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resonantly enhanced selective photochemical etching of GaN

(2009) E. Trichas et al.   APPLIED PHYSICS LETTERS

Photoelectrochemical etching of p-type GaN heterostructures

(2009) Adele C. Tamboli et al.   APPLIED PHYSICS LETTERS

Lattice Strain Due to an Atomic Vacancy

(2009) Shidong Li et al.   INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES