Theoretical Prediction of an Antimony-Silicon Monolayer $$(\hbox {penta-Sb}_{2}\hbox {Si})$$(penta-Sb2Si): Band Gap Engineering by Strain Effect
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Title
Theoretical Prediction of an Antimony-Silicon Monolayer
$$(\hbox {penta-Sb}_{2}\hbox {Si})$$(penta-Sb2Si): Band Gap Engineering by Strain Effect
Authors
Keywords
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Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 4, Pages 2290-2297
Publisher
Springer Nature
Online
2018-01-10
DOI
10.1007/s11664-017-6045-0
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