Theoretical Prediction of an Antimony-Silicon Monolayer $$(\hbox {penta-Sb}_{2}\hbox {Si})$$(penta-Sb2Si): Band Gap Engineering by Strain Effect
出版年份 2018 全文链接
标题
Theoretical Prediction of an Antimony-Silicon Monolayer
$$(\hbox {penta-Sb}_{2}\hbox {Si})$$(penta-Sb2Si): Band Gap Engineering by Strain Effect
作者
关键词
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出版物
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 4, Pages 2290-2297
出版商
Springer Nature
发表日期
2018-01-10
DOI
10.1007/s11664-017-6045-0
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