Explicit screening full band quantum transport model for semiconductor nanodevices

Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

(2016) Pengyu Long et al.   IEEE ELECTRON DEVICE LETTERS

Permittivity of Oxidized Ultra-Thin Silicon Films From Atomistic Simulations

(2015) Stanislav Markov et al.   IEEE ELECTRON DEVICE LETTERS

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

(2015) Yaohua P. Tan et al.   PHYSICAL REVIEW B

Tunnel Field-Effect Transistors: State-of-the-Art

(2014) Hao Lu et al.   IEEE Journal of the Electron Devices Society

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

(2011) Sebastian Steiger et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

(2011) Yann-Michel Niquet et al.   PHYSICAL REVIEW B

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

(2010) Saurabh Mookerjea et al.   IEEE ELECTRON DEVICE LETTERS

Electron density and transport in top-gated graphene nanoribbon devices: First-principles Green function algorithms for systems containing a large number of atoms

(2010) Denis A. Areshkin et al.   PHYSICAL REVIEW B

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasers

(2009) Alpár Mátyás et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Full-band envelope-function approach for type-II broken-gap superlattices

(2009) Till Andlauer et al.   PHYSICAL REVIEW B

Dielectric constant reduction in silicon nanostructures

(2008) Han G. Yoo et al.   PHYSICAL REVIEW B

Modeling of Nanoscale Devices

(2008) M.P. Anantram et al.   PROCEEDINGS OF THE IEEE