Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

标题
Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 6, Pages 819-822
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-05-01
DOI
10.1109/led.2018.2831698

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