Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Published 2007 View Full Article

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Title
Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 1, Pages 5-7
Publisher
Elsevier BV
Online
2007-11-06
DOI
10.1016/j.jcrysgro.2007.10.014

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