Article
Physics, Applied
Yu Duan, Jingshan Wang, Zhongtao Zhu, Guanxi Piao, Kazutada Ikenaga, Hiroki Tokunaga, Shuuichi Koseki, Mayank Bulsara, Patrick Fay
Summary: We present a ion-implanted triple-zone junction termination extension (JTE) for vertical GaN p-n diodes. The design of triple-zone JTE reduces the peak electric fields at the contact metal edge and at the edge of the JTE compared to conventional approaches. Experimental results show that GaN p-n diodes with triple-zone JTE achieve a maximum breakdown voltage of 1.27 kV, significantly higher than those with single-zone JTE structure. The triple-zone JTE design provides a wider window for fabrication processing and epitaxial wafer growth, making it promising for cost-effective fabrication of GaN power electronics.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Wei Lin, Maojun Wang, Ruiyuan Yin, Jin Wei, Cheng P. Wen, Bing Xie, Yilong Hao, Bo Shen
Summary: The breakdown voltage of vertical GaN p-n diode is successfully boosted from 661V to 1489V using the HMSG-JTE technique, improving the electric field distribution and enhancing device performance.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida, Masahiro Horita, Nobuyuki Ikarashi, Kacper Sierakowski, Michal Bockowski, Jun Suda
Summary: This study investigates the P-type doping in specific areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) to enhance the performance of vertical GaN power devices. The research demonstrates that UHPA at lower temperatures can achieve comparable activation of Mg ions and reduce annealing pressure, allowing for larger wafers to be processed. However, controlling the vertical doping profile is challenging. The study also highlights the potential applications of anisotropic diffusion of Mg in vertical device structures.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Chen Yang, Houqiang Fu, Kai Fu, Tsung-Han Yang, Jingan Zhou, Jossue Montes, Yuji Zhao
Summary: This paper investigates low-leakage hydrogen plasma (HP) terminated GaN-on-GaN vertical p-n diodes, achieving significant reductions in leakage current and improvements in breakdown voltage with a p-GaN extension design. The devices demonstrate non-destructive breakdown voltage of 1.68 kV, specific on-resistance of 0.40 MΩcm², and Baliga's figure of merit of 7.1 GWcm(-2), showing the effectiveness of HP termination with p-GaN extension in enhancing the performance of vertical GaN power diodes.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Andrzej Taube, Maciej Kaminski, Jaroslaw Tarenko, Oskar Sadowski, Marek Ekielski, Anna Szerling, Pawel Prystawko, Michal Bockowski, Izabella Grzegory
Summary: We report the fabrication and characterization of high breakdown voltage and high current injection vertical GaN-on-GaN p-n diodes on ammonothermally grown bulk GaN substrates. The active region of the diodes exhibits bright electroluminescence with high intensity near band edge emission and low intensity defect and unintentional impurities-related bands. The fabricated devices show high breakdown voltage, high on/off current ratio, high current density, and extremely low ON-resistance under high current injection.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Jiangfeng Du, Zhiyuan Zhao, Kuiyuan Tian, Yong Liu, Yonggang Jiang, Qi Yu
Summary: This study proposed a method to improve the performance of GaN diodes by using a compound dielectric structure, which successfully increased the breakdown voltage and FOM through optimized design.
MICRO & NANO LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Xiaolu Guo, Yaozong Zhong, Junlei He, Yu Zhou, Shuai Su, Xin Chen, Jianxun Liu, Hongwei Gao, Xiujian Sun, Qi Zhou, Qian Sun, Hui Yang
Summary: A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was fabricated successfully with a high-quality n(-)-GaN drift layer and precisely-controlled n-type doping, achieving a high current on/off ratio, low specific on-resistance, and relatively high breakdown voltage. Additionally, with an Argon-implanted termination, a record high breakdown voltage of 405 V was achieved while maintaining good forward conduction characteristics for the GaN-on-Si SBD.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Yanjun Li, Shu Yang, Fengwei Ji, Xi Tang, Kuang Sheng
Summary: This work investigates the conductivity modulation in vertical GaN-on-GaN PiN diodes under high current densities and its effect on surge current capability. By utilizing the direct-bandgap property of GaN, the junction temperature at different current densities is characterized through photo-luminescence and electro-luminescence measurements. The increase in current density leads to a rise in junction temperature and a shift in emission peaks. The enhanced conductivity modulation due to self-heating improves the ON-resistance, making it desirable for surge current capability. The study also demonstrates the potential of vertical GaN-on-GaN power devices in high electro-thermal-ruggedness applications based on the achieved surge energy density.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Xiaolu Guo, Yaozong Zhong, Xin Chen, Yu Zhou, Shuai Su, Shumeng Yan, Jianxun Liu, Xiujian Sun, Qian Sun, Hui Yang
Summary: This Letter investigates the reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without argon-implanted termination, revealing the important role of ArIT in reducing leakage and improving breakdown voltage performance.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Tetsuo Narita, Yoshitaka Nagasato, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, Satoshi Ikeda, Satoshi Yamaguchi, Yasuji Kimoto, Masayoshi Kosaki, Tohru Oka, Jun Kojima, Jun Suda
Summary: Reliability tests were conducted on GaN-based vertical p-n junctions under high electrical stresses, showing reproducible avalanche breakdown characteristics over a certain temperature range. In some tests, a small number of diodes degraded during continuous forward current tests, while the majority remained unchanged.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Prakash Pandey, Tolen M. Nelson, William M. Collings, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Raghav Khanna
Summary: A simple edge termination structure for a GaN p-n diode is proposed, which has been empirically validated to increase breakdown capability. This technique reduces complexity in manufacturing and improves the device's voltage-blocking ability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Fuping Huang, Chunshuang Chu, Xingyu Jia, Kangkai Tian, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang
Summary: A hybrid trench MOS barrier Schottky diode (TMBS) structure is proposed to improve the forward current density and the breakdown voltage. By combining the conventional TMBS rectifier with a p-NiO/n-GaN diode, the embedded p-type NiO layer forms a PN junction and improves the current density and breakdown voltage.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Computer Science, Information Systems
Xinyuan Wang, Lian Zhang, Jiaheng He, Zhe Cheng, Zhe Liu, Yun Zhang
Summary: We conducted TCAD analysis on GaN HBTs and investigated the influence of key parameters on gain characteristics, output characteristics, and breakdown characteristics. The DC gain of AlGaN/GaN HBTs showed a non-linear relationship with the increase in Al fraction. By optimizing the base concentration and collector epitaxial layer, we achieved devices with high breakdown voltages, low on-resistance, and increased current gain. Additionally, we investigated the breakdown characteristics of HBTs with different substrates at different inclinations and proposed critical angles to prevent surface breakdown and achieve avalanche in GaN HBTs.
Article
Engineering, Electrical & Electronic
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu
Summary: This study presents a physics-based analytical model for Schotty-type p-GaN gate high-electron-mobility transistors, accurately capturing charge control properties under different conditions and validated through numerical simulations. The research shows that for certain p-GaN thicknesses, lightly doped p-GaN leads to full depletion, while p-GaN with high acceptor concentration reaches partial depletion.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Qi Li, Juan Wang, Genqiang Chen, Shi He, Qianwen Zhang, Shumiao Zhang, Ruozheng Wang, Shuwei Fan, Hong -Xing Wang
Summary: We proposed a nitrogen-doped field plate (NFP) structure for vertical p-type diamond Schottky barrier diode (SBD). The NFP structure was achieved by selective growth of n-doped diamond film to form low conductivity field plate at the edge area of the Schottky contact. The nitrogen-doped diamond was characterized using Raman spectroscopy. Compared with normal device, the reverse breakdown voltage of this SBD with NFP structure was improved from -80 V to -112 V, and the forward current density was slightly decreased from 9189 to 8742 A/cm2 at 10 V. Also, its rectification ratio reached a value of 1011.
DIAMOND AND RELATED MATERIALS
(2023)
Article
Physics, Applied
Lina Cao, Jingshan Wang, Galen Harden, Hansheng Ye, Roy Stillwell, Anthony J. Hoffman, Patrick Fay
APPLIED PHYSICS LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Jingshan Wang, Robert McCarthy, Chris Youtsey, Rekha Reddy, Jinqiao Xie, Edward Beam, Louis Guido, Lina Cao, Patrick Fay
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Lina Cao, Chien-Fong Lo, Hugues Marchand, Wayne Johnson, Patrick Fay
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2018)
Article
Physics, Condensed Matter
Lina Cao, Hansheng Ye, Jingshan Wang, Patrick Fay
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Lina Cao, Zhongtao Zhu, Galen Harden, Hansheng Ye, Jingshan Wang, Anthony Hoffman, Patrick J. Fay
Summary: The temperature dependence of electron and hole impact ionization coefficients in GaN was experimentally investigated, showing that both coefficients decrease with increasing temperature. The Okuto-Crowell model was used to describe this temperature dependence, and successful predictions were made for the breakdown voltage of GaN non-punch through p-n diodes based on measured impact ionization coefficients.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Yu Duan, Jingshan Wang, Zhongtao Zhu, Guanxi Piao, Kazutada Ikenaga, Hiroki Tokunaga, Shuuichi Koseki, Mayank Bulsara, Patrick Fay
Summary: We present a ion-implanted triple-zone junction termination extension (JTE) for vertical GaN p-n diodes. The design of triple-zone JTE reduces the peak electric fields at the contact metal edge and at the edge of the JTE compared to conventional approaches. Experimental results show that GaN p-n diodes with triple-zone JTE achieve a maximum breakdown voltage of 1.27 kV, significantly higher than those with single-zone JTE structure. The triple-zone JTE design provides a wider window for fabrication processing and epitaxial wafer growth, making it promising for cost-effective fabrication of GaN power electronics.
APPLIED PHYSICS LETTERS
(2023)
