Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

(2016) Kiliha Katayama et al.   JOURNAL OF APPLIED PHYSICS

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

(2015) Souvik Kundu et al.   Scientific Reports

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

(2014) S. Starschich et al.   APPLIED PHYSICS LETTERS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

(2013) Catherine Dubourdieu et al.   Nature Nanotechnology

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes

(2011) Feng Zhang et al.   JOURNAL OF APPLIED PHYSICS

Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

(2009) M. H. Tang et al.   APPLIED PHYSICS LETTERS