First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric

Title
First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2high-Kgate dielectric
Authors
Keywords
-
Journal
Publisher
Wiley
Online
2007-10-24
DOI
10.1002/pssa.200723166

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