Article
Materials Science, Multidisciplinary
Hao Wu, Xiaojun Fu, Yuan Wang, Jingwei Guo, Jingyu Shen, Shengdong Hu
Summary: The research demonstrates that both the thin GaN buffer and the step-etched GaN structure contribute to improving the breakdown voltage of the AlGaN/GaN HEMT. The optimized structure increases the breakdown voltage to 1487 V while maintaining a low on-state resistance.
RESULTS IN PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Junao Cheng, Mohammad Wahidur Rahman, Andy Xie, Hao Xue, Shahadat Hasan Sohel, Edward Beam, Cathy Lee, Hao Yang, Caiyu Wang, Yu Cao, Siddharth Rajan, Wu Lu
Summary: In this study, ScAlN/GaN dielectric superjunction high-electron-mobility transistors with high-k passivation layer BZN were demonstrated to enhance breakdown voltage. The use of SiN/BZN/SiN sandwiched passivation layer improved the average breakdown voltage while maintaining similar fT and fmax values. This work shows that high current and high breakdown voltage can be achieved simultaneously on semiconductor heterostructures with high sheet charge density by integrating high-k dielectrics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Bo Yi, Yi Xu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
Summary: In this article, a CB-MIS-HEMT was proposed, in which a thick AlxGa(1-x)N is implemented in the gate region to achieve high V-th and high electron mobility. A Al0.25Ga0.75N/AlN is set on the AlxGa(1-x)N-layer to maintain high 2DEG density in the access region. The thick AlxGa(1-x)N reduces mobility degradation effects and combined with small Al mol fraction design, it achieves low Ron,sp and high Vth simultaneously. An analytical model is presented to predict the electron density and Vth, which matches well with TCAD simulation. For a 600-V design, the CB-MIS-HEMT shows improved electron mobility and reduced R-on,R-sp compared to a conventional recess-gate MIS-HEMT.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Fang Zhang, Xuefeng Zheng, Hao Zhang, Minhan Mi, Yunlong He, Ming Du, Xiaohua Ma, Yue Hao
Summary: In this study, a linear enhancement AlGaN/GaN HEMT with high power density and high efficiency for X-band application was successfully achieved using the selective-area charge implantation (SCI) technique. The under-gate SCI technique was employed to realize device-level transconductance compensation, which significantly improved the linearity of the device. Experimental results demonstrated that SCI HEMTs have immense potential for microwave power amplifiers requiring high linearity.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
Summary: The study revealed that the epitaxial layer structure affects the electrical characteristics of AlGaN/GaN HEMTs. GaN-on-GaN HEMTs showed an improved tradeoff between maximum drain current and breakdown characteristics compared to GaN-on-SiC HEMTs. Moreover, the impact of Fe diffusion on frequency dispersion was relatively limited in GaN-on-GaN devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Praveen Pal, Yogesh Pratap, Sneha Kabra
Summary: A bio-functionalized biosensor based on ZnO-Tetrapod and AlGaN/GaN HEMT has been designed for the detection of uric acid in human serum. The sensor offers high sensitivity, fast response time, and good match with previous experimental data, while its performance may be affected by surface wettability conditions and Al composition in the barrier layer.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Ankit Soni, Mayank Shrivastava
Summary: This study investigated the impact of various charge sources on the electric field distribution and breakdown mechanism of HEMTs, revealing strong correlations between different charges and breakdown voltage. Insights were developed to explain the dependence of HEMT breakdown on surface states, polarization charge, and buffer traps, aiding in the design of efficient surface passivation schemes.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
V. Hemaja, D. K. Panda
Summary: An n-polar GaN MIS-HEMT based biosensor is proposed for label-free detection of various bio-molecules by immobilizing the analytes in the underlap region to alter the electrostatic properties of the device, resulting in a significant increase in drain current and output conductance with the addition of different biomolecules in the nanocavity, with a maximum shift in threshold voltage observed for uricase due to its low dielectric constant.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Instruments & Instrumentation
Pengfei Wan, Jianqun Yang, Hao Jiang, Yadong Wei, Kai Wang, Weiqi Li, Ling Lv, Xingji Li
Summary: This paper identifies the location of the EC-0.9 eV trap caused by irradiation in AlGaN/GaN-HEMTs. The 40 keV He ions only cause damage in the passivation and AlGaN layer, while the 400 keV He ions mainly cause damage in the GaN layer. Test results show that the threshold voltage of the device shifts positively after 400 keV He ion irradiation, and the carrier mobility and Schottky barrier decrease. DLTS results reveal a defect with EC-0.9 eV in the GaN layer after irradiation. Combined with DLTS and TCAD simulation, it is determined that the location of the EC-0.9 eV defects caused by displacement damage is in the GaN layer.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Engineering, Electrical & Electronic
Md. Tasnim Azad, Toiyob Hossain, Bejoy Sikder, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomas Palacios, Nadim Chowdhury
Summary: This work proposes a multimetal gated architecture to improve the linearity of AlGaN/GaN HEMT. Through experimental and simulation analysis, it is found that using different gate metals can reduce the value of third-order transconductance. The proposed device exhibits better compression point, saturation output power, and power added efficiency, and shows excellent linearity performance under deep class AB bias.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang
Summary: In this paper, a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed to suppress gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance stability. This is achieved by using a Al2O3/ZrO2 stacked layer on a conventional AlGaN/GaN HEMT.
Article
Chemistry, Analytical
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub
Summary: We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than +1 V. The buffer structure was based on AlN/GaN superlattices (SLs), delivering a vertical breakdown voltage close to 1.5 kV with a low leakage current all the way to 1200 V.
Article
Physics, Applied
Chih-Yao Chang, Yao-Luen Shen, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Yuh-Renn Wu, Chih-Fang Huang
Summary: In this study, a novel etching buffer layer was designed and incorporated into the p-GaN/AlGaN/GaN high electron mobility transistor structure to improve the etching process. The results showed that the device with the buffer layer exhibited improved process uniformity and device performance.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Jeong-Gil Kim, Chuyoung Cho, Eunjin Kim, Jae Seok Hwang, Kyung-Ho Park, Jung-Hee Lee
Summary: AlGaN/GaN HEMT grown on high-quality AlN buffer layer exhibits low OFF-state leakage current and high I-ON/I-OFF, with the undoped AlN buffer layer effectively suppressing trapping effects and reducing current dispersion in pulsed characteristics. The device also demonstrates high breakdown voltage and excellent figure of merit, showing promise for high-performance RF and power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Hao Wu, Xiaojun Fu, Jingwei Guo, Tao Liu, Yuan Wang, Jun Luo, Zhiyong Huang, Shengdong Hu
Summary: The research investigated the total ionizing dose and annealing effects on Schottky type p-GaN gate Al0.2Ga0.8N/GaN HEMTs. It was found that the threshold voltage shifts are caused by the accumulation of positive charges at the interface of p-GaN/AlGaN. After performing both high temperature and room temperature annealing processes, the shifted threshold voltage recovered, with high temperature accelerating the recovery process. Experiment results suggest that the total ionizing dose effect is recoverable.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Multidisciplinary Sciences
Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, Sheng-Fu Yu, Chung-Ting Ko, Jer-Ren Yang, Ray-Ming Lin, Miin-Jang Chen
SCIENTIFIC REPORTS
(2015)
Article
Nanoscience & Nanotechnology
Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, Chia-Yu Lee, Ming-Jang Chen, Ray-Ming Lin
NANOSCALE RESEARCH LETTERS
(2016)
Article
Nanoscience & Nanotechnology
Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, Chia-Yu Lee, Ming-Jang Chen, Ray-Ming Lin
NANOSCALE RESEARCH LETTERS
(2016)
Article
Nanoscience & Nanotechnology
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin
NANOSCALE RESEARCH LETTERS
(2017)
Article
Nanoscience & Nanotechnology
Shuming Wang, Pin Chieh Wu, Vin-Cent Su, Yi-Chieh Lai, Mu-Ku Chen, Hsin Yu Kuo, Bo Han Chen, Yu Han Chen, Tzu-Ting Huang, Jung-Hsi Wang, Ray-Ming Lin, Chieh-Hsiung Kuan, Tao Li, Zhenlin Wang, Shining Zhu, Din Ping Tsai
NATURE NANOTECHNOLOGY
(2018)
Article
Materials Science, Multidisciplinary
Po-Hsun Chen, Vin-Cent Su, Shang-Hsuan Wu, Ray-Ming Lin, Chieh-Hsiung Kuan
Article
Engineering, Electrical & Electronic
Atanu Das, Danny Hsu Ko, Ray-Ming Lin, Liann-Be Chang, Lee Chow
IEEE ELECTRON DEVICE LETTERS
(2014)
Article
Chemistry, Physical
Bing Xu, Hai Tao Dai, Shu Guo Wang, Fu-Chuan Chu, Chou-Hsiung Huang, Sheng-Fu Yu, Jun Liang Zhao, Xiao Wei Sun, Ray-Ming Lin
INTERNATIONAL JOURNAL OF PHOTOENERGY
(2014)
Article
Chemistry, Analytical
Atanu Das, Danny Hsu Ko, Chia-Hsin Chen, Liann-Be Chang, Chao-Sung Lai, Fu-Chuan Chu, Lee Chow, Ray-Ming Lin
SENSORS AND ACTUATORS B-CHEMICAL
(2014)
Article
Materials Science, Multidisciplinary
Bing Xu, Jun Liang Zhao, Hai Tao Dai, Shu Guo Wang, Ray-Ming Lin, Fu-Chuan Chu, Chou-Hsiung Huang, Sheng-Fu Yu, Xiao Wei Sun
Article
Multidisciplinary Sciences
Huan-Yu Shih, Wei-Hao Lee, Wei-Chung Kao, Yung-Chuan Chuang, Ray-Ming Lin, Hsin-Chih Lin, Makoto Shiojiri, Miin-Jang Chen
SCIENTIFIC REPORTS
(2017)
Article
Physics, Applied
Chia-Yen Huang, Kai-Shiang Chang, Cheng-Yao Huang, Yun-Hsiang Lin, Wei-Chih Peng, Hung-Wei Yen, Ray-Ming Lin, Hao-Chung Kuo
APPLIED PHYSICS LETTERS
(2017)
Article
Optics
Vin-Cent Su, Po-Hsun Chen, Ray-Ming Lin, Ming-Lun Lee, Yao-Hong You, Chung-I Ho, Yi-Chi Chen, Wei-Fan Chen, Chieh-Hsiung Kuan
Proceedings Paper
Engineering, Electrical & Electronic
Bing Xu, Jun Liang Zhao, Shu Guo Wang, Hai Tao Dai, Sheng-Fu Yu, Ray-Ming Lin, Fu-Chuan Chu, Chou-Hsiung Huang, Xiao Wei Sun
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII
(2013)