High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

Title
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 4, Pages 1513-1517
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-03-06
DOI
10.1109/ted.2021.3057000

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