Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes

Correction to Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

(2015) William A. Hubbard et al.   NANO LETTERS

Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor

(2015) Kyoung-Cheol Kwon et al.   Journal of Materials Chemistry C

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

(2015) Rajeswar Panja et al.   Nanoscale Research Letters

Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame

(2014) Joo Hyung Kim et al.   APPLIED PHYSICS LETTERS

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

(2014) S. Gao et al.   APPLIED PHYSICS LETTERS

Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments

(2014) Hao Chen et al.   CARBON

Table of contents

(2014)   IEEE ELECTRON DEVICE LETTERS

Conductive-bridging random-access memory cell fabricated with a top Ag electrode, a polyethylene oxide layer, and a bottom Pt electrode

(2014) Hyun-Min Seung et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

(2014) Hyun-Min Seung et al.   NANOTECHNOLOGY

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

(2013) Wouter Devulder et al.   ACS Applied Materials & Interfaces

Formation process of conducting filament in planar organic resistive memory

(2013) S. Gao et al.   APPLIED PHYSICS LETTERS

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

(2013) Attilio Belmonte et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ag/GeS x /Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

(2013) Jan van den Hurk et al.   Scientific Reports

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte

(2011) J. Q. Huang et al.   IEEE ELECTRON DEVICE LETTERS

Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch

(2011) Munehiro Tada et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Multilevel Nonvolatile Small-Molecule Memory Cell Embedded with Ni Nanocrystals Surrounded by a NiO Tunneling Barrier

(2009) Jea-Gun Park et al.   NANO LETTERS