Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides
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Title
Rapid and nondestructive layer number identification of two-dimensional layered transition metal dichalcogenides
Authors
Keywords
Transition metal dichalcogenides, Optical contrast, Layer number identification
Journal
RARE METALS
Volume 36, Issue 9, Pages 698-703
Publisher
Springer Nature
Online
2017-06-21
DOI
10.1007/s12598-017-0927-4
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- (2014) Ryan J. Wu et al. ULTRAMICROSCOPY
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- (2013) Hai Li et al. ACS Nano
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- (2013) Wengen Ouyang et al. NANOTECHNOLOGY
- Liquid Exfoliation of Layered Materials
- (2013) V. Nicolosi et al. SCIENCE
- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
- (2012) Dattatray J. Late et al. ADVANCED FUNCTIONAL MATERIALS
- Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition
- (2012) Yi-Hsien Lee et al. ADVANCED MATERIALS
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- (2011) Inhwa Jung et al. NANOTECHNOLOGY
- Visibility of dichalcogenide nanolayers
- (2011) M M Benameur et al. NANOTECHNOLOGY
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
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