A new insight for ohmic contacts to MoS2: by tuning MoS2 affinity energies but not metal work-functions

General criterion to distinguish between Schottky and Ohmic contacts at the metal/two-dimensional semiconductor interface

(2017) Yanwen Chen et al.   Nanoscale

Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion–MoS2 sandwich interfaces

(2017) Jie Su et al.   Nanoscale

Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

(2017) Junyoung Kwon et al.   Nanoscale

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

(2016) Yang Xu et al.   ACS Nano

Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors

(2016) Tingting Shen et al.   ACS Nano

Monolayer Phosphorene–Metal Contacts

(2016) Yuanyuan Pan et al.   CHEMISTRY OF MATERIALS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Reduction of Fermi level pinning at Au–MoS2interfaces by atomic passivation on Au surface

(2016) Kyung-Ah Min et al.   2D Materials

Defect engineering of two-dimensional transition metal dichalcogenides

(2016) Zhong Lin et al.   2D Materials

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Large-Area Epitaxial Monolayer MoS2

(2015) Dumitru Dumcenco et al.   ACS Nano

The study of interaction and charge transfer at black phosphorus–metal interfaces

(2015) Sicong Zhu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

(2015) Aaditya Manjanath et al.   NANOTECHNOLOGY

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Tuning the Schottky barrier height of the Pd–MoS2 contact by different strains

(2015) Biao Liu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Origin of hydrogen evolution activity on MS2 (M = Mo or Nb) monolayers

(2015) Xiaobo Chen et al.   Journal of Materials Chemistry A

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation

(2014) Ning Lu et al.   Nanoscale

Intimate contacts

(2014) Debdeep Jena et al.   NATURE MATERIALS

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Solar-energy conversion and light emission in an atomic monolayer p–n diode

(2014) Andreas Pospischil et al.   Nature Nanotechnology

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates

(2013) Wei Chen et al.   NANO LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

(2013) Jen-Ru Chen et al.   NANO LETTERS

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2(Y=Fand OH) all-2D semiconductor/metal contacts

(2013) Li-Yong Gan et al.   PHYSICAL REVIEW B

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Benzene adsorbed on metals: Concerted effect of covalency and van der Waals bonding

(2012) Wei Liu et al.   PHYSICAL REVIEW B

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Van der Waals density functionals applied to solids

(2011) Jiří Klimeš et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Efficient Implementation of a van der Waals Density Functional: Application to Double-Wall Carbon Nanotubes

(2009) Guillermo Román-Pérez et al.   PHYSICAL REVIEW LETTERS

Ab-initiosimulations of materials using VASP: Density-functional theory and beyond

(2008) Jürgen Hafner   JOURNAL OF COMPUTATIONAL CHEMISTRY