Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

An improved model for the surface potential and drain current in negative capacitance field effect transistors

(2016) Y. G. Xiao et al.   RSC Advances

Effect of zirconium or titanium component on electrical properties of PbZr1−xTixO3gated negative capacitance ferroelectric field-effect transistors

(2016) Y G Xiao et al.   Materials Research Express

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

(2015) M. Gottwald et al.   APPLIED PHYSICS LETTERS

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

(2012) Y. G. Xiao et al.   APPLIED PHYSICS LETTERS

Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

(2012) Y. G. Xiao et al.   APPLIED PHYSICS LETTERS

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

(2012) Johannes Muller et al.   IEEE ELECTRON DEVICE LETTERS

Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents

(2011) C. H. Cheng et al.   APPLIED PHYSICS LETTERS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Interfacial phase-change memory

(2011) R. E. Simpson et al.   Nature Nanotechnology

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS