Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 214, Issue 10, Pages 1700210
Publisher
Wiley
Online
2017-06-13
DOI
10.1002/pssa.201700210
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode
- (2016) Youngbae Son et al. ACS Applied Materials & Interfaces
- Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2thin films
- (2016) Giang T. Dang et al. Applied Physics Express
- Oxide bipolar electronics: materials, devices and circuits
- (2016) Marius Grundmann et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors
- (2016) W. H. Han et al. Physical Review Applied
- Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects
- (2015) A de Jamblinne de Meux et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
- (2015) Peter Schlupp et al. Advanced Electronic Materials
- Method of choice for fabrication of high-quality ZnO-based Schottky diodes
- (2014) Stefan Müller et al. JOURNAL OF APPLIED PHYSICS
- An amorphous oxide semiconductor thin-film transistor route to oxide electronics
- (2013) John F. Wager et al. CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
- Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
- (2013) Alexander Lajn et al. JOURNAL OF APPLIED PHYSICS
- Overview of electroceramic materials for oxide semiconductor thin film transistors
- (2013) Jin-Seong Park et al. JOURNAL OF ELECTROCERAMICS
- Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition
- (2013) Daniel Splith et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing
- (2013) Haifeng Pu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
- (2012) Jaeyeong Heo et al. APPLIED PHYSICS LETTERS
- High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
- (2012) Adrian Chasin et al. APPLIED PHYSICS LETTERS
- Charge transport in solution-processed zinc tin oxide thin film transistors
- (2012) Wenbing Hu et al. JOURNAL OF MATERIALS RESEARCH
- Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
- (2012) Yong-Hoon Kim et al. NATURE
- Analysis of electronic subgap states in amorphous semiconductor oxides based on the example of Zn-Sn-O systems
- (2012) Wolfgang Körner et al. PHYSICAL REVIEW B
- Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
- (2010) M. Lorenz et al. APPLIED PHYSICS LETTERS
- Hopping Conduction Observed in Thermal Admittance Spectroscopy
- (2010) U. Reislöhner et al. PHYSICAL REVIEW LETTERS
- Material characteristics and applications of transparent amorphous oxide semiconductors
- (2010) Toshio Kamiya et al. NPG Asia Materials
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO2(110) and (101) Thin Films
- (2009) Oliver Bierwagen et al. Applied Physics Express
- Oxidized noble metal Schottky contacts to n-type ZnO
- (2009) M. W. Allen et al. APPLIED PHYSICS LETTERS
- High performance solution-processed amorphous zinc tin oxide thin film transistor
- (2009) Seok-Jun Seo et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
- (2009) A. Lajn et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Electronic properties of amorphous zinc tin oxide films by junction capacitance methods
- (2008) Peter T. Erslev et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
- Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application
- (2008) Madambi K. Jayaraj et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started