Hysteresis Effect in Two‐Dimensional Bi 2 Te 3 Nanoplate Field‐Effect Transistors
Published 2020 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Hysteresis Effect in Two‐Dimensional Bi
2
Te
3
Nanoplate Field‐Effect Transistors
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 7, Issue 1, Pages 2000851
Publisher
Wiley
Online
2020-11-30
DOI
10.1002/aelm.202000851
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- High-performance p-type MoS2 field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping
- (2019) Shaoxiong Wu et al. 2D Materials
- High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates
- (2019) J.L. Liu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents
- (2019) Peng Wu et al. IEEE ELECTRON DEVICE LETTERS
- Ultrasensitive flexible near-infrared photodetectors based on Van der Waals Bi2Te3 nanoplates
- (2019) J.L. Liu et al. APPLIED SURFACE SCIENCE
- A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
- (2019) Zhen Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Ultra-fast and high flexibility near-infrared photodetectors based on Bi2Se3 nanobelts grown via catalyst-free van der Waals epitaxy
- (2019) J.L. Liu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Nontoxic, Eco-friendly Fully Water-Induced Ternary Zr-Gd-O Dielectric for High-Performance Transistors and Unipolar Inverters
- (2018) Li Zhu et al. Advanced Electronic Materials
- Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation
- (2018) Jihan Chen et al. APPLIED PHYSICS LETTERS
- Tuning strain and photoluminescence of confined Au nanoparticles by hydrogen passivation
- (2017) Cailei Yuan et al. RSC Advances
- Ambient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors
- (2017) Jae-Hyuk Ahn et al. Scientific Reports
- Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures
- (2016) W. Lei et al. APPLIED PHYSICS LETTERS
- Toward High-Performance Top-Gate Ultrathin HfS2Field-Effect Transistors by Interface Engineering
- (2016) Kai Xu et al. Small
- Nanostructured materials for non-volatile organic transistor memory applications
- (2016) C.-C. Shih et al. Materials Horizons
- Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation
- (2015) J. Zhang et al. JOURNAL OF ELECTRONIC MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Measurement of mobility in dual-gated MoS2 transistors
- (2013) Michael S. Fuhrer et al. Nature Nanotechnology
- Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
- (2013) Xiaodong Li et al. PHYSICAL REVIEW B
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
- (2012) Jiwon Chang et al. JOURNAL OF APPLIED PHYSICS
- Spectroscopic Investigation of Oxygen- and Water-Induced Electron Trapping and Charge Transport Instabilities in n-type Polymer Semiconductors
- (2012) Riccardo Di Pietro et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics
- (2011) Young Gon Lee et al. APPLIED PHYSICS LETTERS
- Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
- (2011) Han Liu et al. APPLIED PHYSICS LETTERS
- Hysteresis of Electronic Transport in Graphene Transistors
- (2010) Haomin Wang et al. ACS Nano
- Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates
- (2010) P Joshi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two-Dimensional Crystals
- (2010) Desalegne Teweldebrhan et al. NANO LETTERS
- Transient drain current characteristics of ZnO nanowire field effect transistors
- (2009) Jongsun Maeng et al. APPLIED PHYSICS LETTERS
- Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
- (2009) Y. L. Chen et al. SCIENCE
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started