期刊
NANOTECHNOLOGY
卷 28, 期 41, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa810f
关键词
heterostructure; field-effect transistors; two-dimensional
资金
- NSFC [61376093, 61622401]
- National Key Research and Development Program [2016YFA0203900]
Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe2/MoS2 hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe2/SnSe2 heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.
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