Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment
Authors
Keywords
-
Journal
Nanoscale
Volume 9, Issue 27, Pages 9333-9339
Publisher
Royal Society of Chemistry (RSC)
Online
2017-04-21
DOI
10.1039/c7nr01883e
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts
- (2016) Tae-Young Kim et al. ACS Nano
- Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
- (2016) Mahmut Tosun et al. ACS Nano
- Reductive exfoliation of substoichiometric MoS2bilayers using hydrazine salts
- (2016) Torben Daeneke et al. Nanoscale
- Tuning the threshold voltage from depletion to enhancement mode in a multilayer MoS2 transistor via oxygen adsorption and desorption
- (2016) Jie Jiang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Efficient hydrogen evolution in transition metal dichalcogenides via a simple one-step hydrazine reaction
- (2016) Dustin R. Cummins et al. Nature Communications
- Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
- (2015) Philippe K. Chow et al. ACS Nano
- Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics
- (2015) Xudong Wang et al. ADVANCED MATERIALS
- Controlled Doping of Large-Area Trilayer MoS2with Molecular Reductants and Oxidants
- (2015) Alexey Tarasov et al. ADVANCED MATERIALS
- Layer-modulated synthesis of uniform tungsten disulfide nanosheet using gas-phase precursors
- (2015) Jusang Park et al. Nanoscale
- Influence of post-annealing on the off current of MoS2 field-effect transistors
- (2015) Seok Daniel Namgung et al. Nanoscale Research Letters
- Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate
- (2014) Jia Dan Lin et al. ACS Nano
- Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
- (2014) In Soo Kim et al. ACS Nano
- Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
- (2014) Min Sup Choi et al. ACS Nano
- Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2
- (2014) Namphung Peimyoo et al. ACS Nano
- Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors
- (2014) Nengjie Huo et al. ADVANCED FUNCTIONAL MATERIALS
- Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
- (2014) Daisuke Kiriya et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Probing Local Strain at MX2–Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering
- (2014) Yinghui Sun et al. NANO LETTERS
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- (2014) Lingming Yang et al. NANO LETTERS
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- (2014) Zhihao Yu et al. Nature Communications
- Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers
- (2013) Han Liu et al. ACS Nano
- Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
- (2013) Sheneve Z. Butler et al. ACS Nano
- Sensing Behavior of Atomically Thin-Layered MoS2 Transistors
- (2013) Dattatray J. Late et al. ACS Nano
- Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography
- (2013) Jeong Gon Son et al. ADVANCED MATERIALS
- Characterization of metal contacts for two-dimensional MoS2 nanoflakes
- (2013) Sumeet Walia et al. APPLIED PHYSICS LETTERS
- Band offsets and heterostructures of two-dimensional semiconductors
- (2013) Jun Kang et al. APPLIED PHYSICS LETTERS
- Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
- (2013) Yuchen Du et al. IEEE ELECTRON DEVICE LETTERS
- Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
- (2013) Hui Fang et al. NANO LETTERS
- Raman Spectroscopy Study of Lattice Vibration and Crystallographic Orientation of Monolayer MoS2under Uniaxial Strain
- (2013) Yanlong Wang et al. Small
- Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals
- (2013) Yumeng Shi et al. Scientific Reports
- High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared
- (2012) Woong Choi et al. ADVANCED MATERIALS
- Can Commonly Used Hydrazine Produce n-Type Graphene?
- (2012) Surajit Some et al. CHEMISTRY-A EUROPEAN JOURNAL
- Tightly bound trions in monolayer MoS2
- (2012) Kin Fai Mak et al. NATURE MATERIALS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Symmetry-dependent phonon renormalization in monolayer MoS2transistor
- (2012) Biswanath Chakraborty et al. PHYSICAL REVIEW B
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Contact resistance in few and multilayer graphene devices
- (2010) A. Venugopal et al. APPLIED PHYSICS LETTERS
- Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance
- (2009) Hyeon-Jin Shin et al. ADVANCED FUNCTIONAL MATERIALS
- Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes
- (2008) Chuan Wang et al. APPLIED PHYSICS LETTERS
- Transferring and Identification of Single- and Few-Layer Graphene on Arbitrary Substrates
- (2008) Alfonso Reina et al. Journal of Physical Chemistry C
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More