Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

Nano-structural features of barite crystals observed by electron microscopy and atom probe tomography

(2016) Juliane Weber et al.   CHEMICAL GEOLOGY

A mechanistic study of impurity segregation at silicon grain boundaries

(2015) Peter Käshammer et al.   JOURNAL OF APPLIED PHYSICS

Interstitial iron impurities at grain boundaries in silicon: A first-principles study

(2015) Benedikt Ziebarth et al.   PHYSICAL REVIEW B

Complex Nanotwin Substructure of an AsymmetricΣ9Tilt Grain Boundary in a Silicon Polycrystal

(2015) A. Stoffers et al.   PHYSICAL REVIEW LETTERS

Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

(2015) Andreas Stoffers et al.   PROGRESS IN PHOTOVOLTAICS

Linear complexions: Confined chemical and structural states at dislocations

(2015) M. Kuzmina et al.   SCIENCE

HAADF–STEM atom counting in atom probe tomography specimens: Towards quantitative correlative microscopy

(2015) W. Lefebvre et al.   ULTRAMICROSCOPY

Combining structural and chemical information at the nanometer scale by correlative transmission electron microscopy and atom probe tomography

(2015) M. Herbig et al.   ULTRAMICROSCOPY

A novel approach for site-specific atom probe specimen preparation by focused ion beam and transmission electron backscatter diffraction

(2014) K. Babinsky et al.   ULTRAMICROSCOPY

Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

(2013) Yutaka Ohno et al.   APPLIED PHYSICS LETTERS

Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System

(2013) Lorenzo Rigutti et al.   NANO LETTERS

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

(2013) Martin Couillard et al.   PHILOSOPHICAL MAGAZINE

Atom-probe tomography study of boron precipitation in highly implanted silicon

(2013) Didier Blavette et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Defect generation, advanced crystallization, and characterization methods for high-quality solar-cell silicon

(2012) Marisa Di Sabatino et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Sample preparation for atomic-resolution STEM at low voltages by FIB

(2012) Miroslava Schaffer et al.   ULTRAMICROSCOPY

A reproducible method for damage-free site-specific preparation of atom probe tips from interfaces

(2011) Peter Johann Felfer et al.   MICROSCOPY RESEARCH AND TECHNIQUE

Nucleation of boron clusters in implanted silicon

(2009) O. Cojocaru-Mirédin et al.   JOURNAL OF APPLIED PHYSICS

Clustering and nearest neighbour distances in atom-probe tomography

(2009) T. Philippe et al.   ULTRAMICROSCOPY