Article
Engineering, Electrical & Electronic
Renren Xu, Jiaxin Yao, Gaobo Xu, Yanzhao Wei, Huaxiang Yin, Qingzhu Zhang, Guoliang Tian, Yanrong Wang, Gangping Yan, Jinjuan Xiang, Weihai Bu, Yongqin Wu, Zhenhua Wu, Jun Luo, Wenwu Wang
Summary: Adding interfacial Al2O3 doping can modulate the dielectric and electrical properties, meeting the criteria required for gate electrode p-type effective work function (EWF).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Analytical
Jeewon Park, Wansu Jang, Changhwan Shin
Summary: A gate-stack engineering technique was proposed to enhance the performance of a 28 nm low-power high-k/metal-gate device. By using HfSiO thin films instead of HfSiON, the device performance was improved with suppressed gate leakage current. The new device showed reduced thickness of the electrical oxide layer and reliable performance enhancement.
Article
Engineering, Electrical & Electronic
Wei-Jen Chen, Yi-Chun Liu, Yun-Wen Chen, Yu-Rui Chen, Hsin-Cheng Lin, Chien-Te Tu, Bo-Wei Huang, C. W. Liu
Summary: This study utilizes Hf(0.2)Zr(0.8)O(2) gate stacks with high dielectric constant to enhance the performance of high mobility Ge0.95Si0.05 channels, and achieves channel release through wet etching. Experimental results show that the ION of nanowires and nanosheets reach record high values under specific conditions, and gate delay can be improved by combining different structures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Chin-Hsiu Huang, Shang-Fu Tsai, Cheng-Yuan Li, Zi-Qin Hong, Hsin-Kai Fang
Summary: The effects of high-k gate stacks and plasma treatments on the electrical and reliability characteristics of FinFET were comprehensively studied in this work. Different gate stack materials and plasma treatments were shown to achieve higher ON-current, higher ON-/OFF-current ratio, smaller subthreshold swing, and lower gate leakage current in FinFETs, leading to significant improvements in performance and reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Ceramics
Ze-Wei Huang, Kao-Shuo Chang
Summary: Spin-coating was used to fabricate amorphous high-entropy oxide films on Si substrates, showing promising performance with low leakage current density after forming gas annealing. The resulting stack exhibited distinct layers with a clearly defined interface between different materials and no substantial diffusion among them. Medium-entropy-oxide films and their MOS devices, fabricated for comparison, exhibited inferior performance.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Multidisciplinary
Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Sung Jin An, Ki-Sik Im
Summary: Understanding the carrier transport mechanisms in nanowires is crucial for the creation of next-generation nanoscale devices. In this study, the effects of temperature on GaN nanowire wrap-gate transistors (WGTs) made via a top-down technique were examined. The predicted conductance in this transistor remains unchanged up to a temperature of 240 K and then increases as the temperature rises. Different behaviors were observed at different gate voltages, suggesting the presence of phonon and impurity scattering processes on the surface or core of GaN nanowires.
Article
Chemistry, Physical
Dajung Kim, Jimin Chae, Seok-Bo Hong, Jonghoon Kim, Gihyeon Kwon, Hoedon Kwon, Kwangsik Jeong, Mann -Ho Cho
Summary: Carrier scattering in photodetectors employing 2D dichalcogenide as an absorber impedes carrier transport. This study used topological insulator Bi2Se3 as a carrier transport layer to effectively improve photoresponsivity by utilizing the topological surface state.
APPLIED SURFACE SCIENCE
(2024)
Article
Materials Science, Multidisciplinary
Lin Hao, Gang He, Shanshan Jiang, Zhenxiang Dai, Ganhong Zheng, Jinyu Lu, Lesheng Qiao, Jingbiao Cui
Summary: This study achieved the improvement of interface chemistry and transport characteristics of Hf1-xYbxOy/Al2O3/GaSb gate stacks through interface passivation and doping engineering technology. The experimental results show that the gate stack has potential application in future GaSb-based metal-oxide-semiconductor field effect transistor (MOSFET) devices.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Rebecca T. Graf, Anja Schlosser, Daniel Zambo, Jakob Schlenkrich, Pascal Rusch, Atasi Chatterjee, Herbert Pfnuer, Nadja C. Bigall
Summary: In the research on nanoplatelets, it has been found that reducing the inter-particle distances through ligand exchange can enhance charge transport ability. This study characterizes the effects of ligand exchange through various tests and reveals that smaller distances result in higher photocurrents.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Fu-Chien Chiu, Wei-Chia Chen, Jih-Huah Wu, Kuei-Shu Chang-Liao
Summary: In this study, p-channel MOSFETs with ZrO2/Al2O3/GeO2 high-k gate stack on n-Ge substrate were fabricated and examined for interface state generation and hole trapping during voltage stresses. The results showed that hole trapping initially caused threshold voltage shift, but over time interface states became the dominant factor. The characteristic time for this transition was found to be independent of stress voltage at approximately 10^6 seconds.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Y. X. Ma, H. Su, W. M. Tang, P. T. Lai
Summary: The resonance between gate electrode plasmons and gate oxide phonons in metal-oxide semiconductor devices can degrade carrier mobility in the semiconductor channel. This phenomenon poses a temperature-related reliability issue for electronic circuits when carrier freeze-out reduces carrier density in the gate electrode, leading to resonance-induced mobility reduction.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Qi Wu, Xiaoyu Wang, Peiyan Sun, Zhen Wang, Jian Chen, Zhigang Chen, Ge Song, Chenglong Liu, Xinyang Mu, Shan Cong, Zhigang Zhao
Summary: The newly demonstrated multilayered metal-dielectric metamaterials (MMDMs) serve as a new family of inorganics-based EC materials to achieve dynamic alternation among multicolors with high contrast and high color purity. This is achieved by significantly enhancing the confinement of the incident light in specific optical frequencies.
Article
Chemistry, Multidisciplinary
Kibret A. Messalea, Nitu Syed, Ali Zavabeti, Md Mohiuddin, Azmira Jannat, Patjaree Aukarasereenont, Chung K. Nguyen, Mei Xian Low, Sumeet Walia, Benedikt Haas, Christoph T. Koch, Nasir Mahmood, Khashayar Khoshmanesh, Kourosh Kalantar-Zadeh, Torben Daeneke
Summary: A stoichiometric cubic polymorph of 2D antimony oxide (Sb2O3) was synthesized as an ideal high-k dielectric sheet using a low-temperature, substrate-independent, silicon-industry-compatible liquid metal synthesis technique. The obtained alpha-Sb2O3 exhibited high crystallinity, wide band gap of approximately 4.4 eV, and a maximum relative permittivity of 84 with a breakdown electric field of around 10 MV/cm. The isolated 2D alpha-Sb2O3 nanosheets showed promise as gate oxides for conventional and van der Waals heterostructure-based electronics due to low leakage currents in top-gated field-effect transistors.
Article
Engineering, Electrical & Electronic
Jin-Ju Kim, Seung-Eon Moon, Sung-Min Yoon
Summary: Metal-ferroelectric-insulator-Si (MFIS) gate stack structures were fabricated and studied for optimal process indicators in ferroelectric-field-effect-driven nonvolatile memory operations. The introduction of HfO2 IL enhanced the capacitance coupling ratio, and controlling the film thickness of HZO FL and HfO2 IL enabled the realization of a large ferroelectric memory window and long-term retention.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Takahisa Tanaka, Taro Kato, Takeaki Yajima, Ken Uchida
Summary: In this study, surface electron scattering in Pt nanostructures was quantitatively studied using molecular dynamics simulations and density functional nonequilibrium Green's function calculations. The results showed that an increase in resistivity was observed due to the adsorption of H on thin Pt(111) nanosheets.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Alban Gassenq, Ivan Duchemin, Yann-Michel Niquet, Alain Gliere, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
Summary: This study simulates the cavities in high tensile strained Ge crossbeams and maps the bandgaps for different strain configurations. It shows a trade-off between membrane orientation and arm curvature to achieve the largest possible volume of amplifying material.
IEEE PHOTONICS JOURNAL
(2022)
Article
Physics, Applied
Biel Martinez, Yann-Michel Niquet
Summary: Semiconductor spin qubits can exhibit significant variability between devices due to spin-orbit coupling mechanisms. The roughness of the interface, charge traps, layout, and process variations all contribute to shaping the wave functions and spin properties. Understanding the reproducibility of qubits is crucial for developing strategies to handle variability and setting constraints on material quality and fabrication techniques.
PHYSICAL REVIEW APPLIED
(2022)
Article
Physics, Applied
Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-Andre Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bauerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Summary: One of the main advantages of silicon spin qubits is its scalability and compatibility with widely used CMOS fabrication technology. In this study, single electron spin detection using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector is demonstrated. The anisotropy of the spin-valley mixing and the charge noise in the strong spin-valley coupling regime are investigated.
PHYSICAL REVIEW APPLIED
(2022)
Article
Chemistry, Multidisciplinary
Yu Fu, Jing Li, Jules Papin, Paul Noel, Salvatore Teresi, Maxen Cosset-Cheneau, Cecile Grezes, Thomas Guillet, Candice Thomas, Yann-Michel Niquet, Philippe Ballet, Tristan Meunier, Jean-Philippe Attane, Albert Fert, Laurent Vila
Summary: Spin-orbit effects in topological insulators and at Rashba interfaces have led to various newly discovered effects. In this study, a bilinear magnetoresistance phenomenon was observed in strained HgTe, and its amplitude and sign could be controlled by adjusting the contributions from opposite surfaces using an electric gate.
Article
Nanoscience & Nanotechnology
N. Piot, B. Brun, V Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y-M Niquet, R. Maurand, S. De Franceschi
Summary: This article reports a spin-orbit hole spin qubit, which achieves operation sweet spots by varying the magnetic field direction, reducing charge noise and extending Hahn-echo coherence time, providing new possibilities for the scalability of silicon-based hole spin qubits in quantum information processing.
NATURE NANOTECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
H. Jacquinot, R. Maurand, G. T. Fernandez-Bada, B. Bertrand, M. Casse, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet
Summary: In this study, we conducted simulations on an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation took into account the characteristics of the ESR line, such as geometry, configuration, stack, and material properties, as well as the electromagnetic environment surrounding the qubits, including gates and interconnect networks. By accurately assessing the magnetic and electric field distribution, we found that the EM environment significantly affects the efficiency of the ESR line for spin control, as characterized by the magnetic over electric field ratio generated at the qubit location.
SOLID-STATE ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Cecile X. Yu, Simon Zihlmann, Jose C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Summary: Strong intrinsic spin-orbit interaction in silicon enables strong spin-photon coupling with a frequency of 300 MHz, which is promising for scalable quantum information processing. Coupling semiconductor quantum dots to superconducting microwave resonators allows for fast non-demolition readout and on-chip connectivity. By leveraging the strong spin-orbit interaction in silicon, a spin-photon coupling rate of 330 MHz is achieved, surpassing the spin-photon decoherence rate and paving the way for circuit quantum electrodynamics with spins in semiconductor quantum dots.
NATURE NANOTECHNOLOGY
(2023)
Article
Physics, Multidisciplinary
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjorn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth
Summary: Silicon quantum devices are evolving from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, leading to increased operational complexity and the need for better pulsed-gate and readout techniques.
NEW JOURNAL OF PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Baker Shalak, Christophe Delerue, Yann-Michel Niquet
Summary: In this paper, the effect of telegraphic noise induced by the fluctuation of a single electric charge on a hole spin qubit in a quantum dot is studied. It is shown that in the most realistic configuration of a low-frequency fluctuator, the system exhibits non-Gaussian behavior with loss of phase coherence when the fluctuator changes state. By manipulating the magnetic field and gate potentials, the dephasing time at the threshold frequency can be significantly increased. However, the dephasing time remains bounded due to dephasing induced by nondiagonal terms in the perturbation Hamiltonian. Additionally, it is found that a clean description of spin relaxation in this type of qubit requires multilevel simulations including the coupling to phonons.
Article
Materials Science, Multidisciplinary
V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann, R. Maurand, Y. -M. Niquet, M. Filippone
Summary: We study a spin circuit-QED device, where a superconducting microwave resonator is connected to a single hole confined in a semiconductor quantum dot via capacitance. The gyromagnetic g matrix of the hole can be electrically modulated due to the strong spin-orbit coupling inherent in valence-band states. This modulation allows for coupling between the photons in the resonator and the hole spin. We demonstrate that the spin-photon interaction can be controlled through gate voltages and magnetic field orientation, and the character of the interaction can switch from fully transverse to fully longitudinal.
Article
Materials Science, Multidisciplinary
Biel Martinez, Jose Carlos Abadillo-Uriel, Esteban A. Rodriguez-Mena, Yann-Michel Niquet
Summary: This study discusses the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane ac electric fields. The lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism that modulates the principal axes of the hole gyromagnetic g matrix. This mechanism enables spin manipulation even in symmetric dots when the magnetic field is applied in the heterostructure's plane.
Article
Engineering, Electrical & Electronic
R. Fontanini, J. Barbot, M. Segatto, S. Lancaster, Q. Duong, F. Driussi, L. Grenouillet, L. Triozon, J. Coignus, T. Mikolajick, S. Slesazeck, D. Esseni
Summary: We present a combined experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. The injection and trapping of charge into the ferroelectric-dielectric stack are found to have a significant impact on the polarization switching. Our findings are important for understanding the physical processes and designing devices for memory and memristor applications.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Physics, Multidisciplinary
F. T. Armand Pilon, Y-M Niquet, J. Chretien, N. Pauc, V Reboud, V Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Summary: This paper discusses the research progress and methods for optimizing the performance of group IV lasers. By using strained Ge microbridges as samples and measuring the changes in refractive index and mode linewidth, the values of injection carrier densities and cavity losses are derived. The study finds that Ge lasers can achieve lasing at lower temperatures and specific strain conditions, but are limited by parasitic absorption. Material optimization and reducing optical losses are key for improving the performance.
PHYSICAL REVIEW RESEARCH
(2022)
Article
Quantum Science & Technology
Virginia N. Ciriano-Tejel, Michael A. Fogarty, Simon Schaal, Louis Hutin, Benoit Bertrand, Lisa Ibberson, M. Fernando Gonzalez-Zalba, Jing Li, Yann-Michel Niquet, Maud Vinet, John J. L. Morton
Summary: Silicon spin qubits show great promise for realizing large-scale quantum processors. This study successfully measured an electron spin in a singly occupied gate-defined quantum dot fabricated using CMOS-compatible processes on a 300-mm wafer. The demonstrated spin-readout method and long lifetimes of the electron spins indicate the potential for qubit devices in scalable architectures.
Article
Materials Science, Multidisciplinary
Vincent P. Michal, Benjamin Venitucci, Yann-Michel Niquet
Summary: The article discusses methods and techniques for realizing qubits by confining holes in semiconductor nanostructures. It is found that fast all-electrical manipulation can be achieved by introducing spin-orbit coupling. Spin-orbit coupling can be implemented through static electric bias and ac electrical driving.
