Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

(2011) C. Merckling et al.   APPLIED PHYSICS LETTERS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Nonlinear structure-composition relationships in the Ge1−ySny/Si(100) (y

(2011) R. Beeler et al.   PHYSICAL REVIEW B

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

(2011) F. Gencarelli et al.   THIN SOLID FILMS

Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

(2010) Y. Chibane et al.   JOURNAL OF APPLIED PHYSICS

Lattice location study of ion implanted Sn and Sn-related defects in Ge

(2010) S. Decoster et al.   PHYSICAL REVIEW B

High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

(2009) R. Loo et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

(2009) G. Wang et al.   THIN SOLID FILMS

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

(2008) Shotaro Takeuchi et al.   APPLIED PHYSICS LETTERS