The mechanism of layer number and strain dependent bandgap of 2D crystal PtSe2

High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

(2016) Yuda Zhao et al.   ADVANCED MATERIALS

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

(2016) Zhishuo Huang et al.   Materials

Tuning the electronic properties of monolayer and bilayer PtSe2via strain engineering

(2016) Pengfei Li et al.   Journal of Materials Chemistry C

Biaxial strain tuned thermoelectric properties in monolayer PtSe2

(2016) San-Dong Guo   Journal of Materials Chemistry C

Superior Gas Sensing Properties of Monolayer PtSe2

(2016) Muhammad Sajjad et al.   Advanced Materials Interfaces

Raman characterization of platinum diselenide thin films

(2016) Maria O’Brien et al.   2D Materials

Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

(2015) Yeliang Wang et al.   NANO LETTERS

Evolution of Electronic Structure as a Function of Layer Thickness in Group-VIB Transition Metal Dichalcogenides: Emergence of Localization Prototypes

(2015) Lijun Zhang et al.   NANO LETTERS

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

(2015) Aaron J. Bradley et al.   NANO LETTERS

Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

(2015) Zhen Zhu et al.   PHYSICAL REVIEW B

Electrically dependent bandgaps in graphene on hexagonal boron nitride

(2014) D. Kaplan et al.   APPLIED PHYSICS LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Pressure-Induced Metallization of Molybdenum Disulfide

(2014) Zhen-Hua Chi et al.   PHYSICAL REVIEW LETTERS

Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization

(2013) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Role of van der Waals corrections for the PtX2(X=O, S, Se) compounds

(2013) Maurício J. Piotrowski et al.   PHYSICAL REVIEW B

Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

(2013) S. Horzum et al.   PHYSICAL REVIEW B

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Efficient Implementation of a van der Waals Density Functional: Application to Double-Wall Carbon Nanotubes

(2009) Guillermo Román-Pérez et al.   PHYSICAL REVIEW LETTERS