Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy

(2017) Gunnar Kusch et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

(2016) Frank Mehnke et al.   JOURNAL OF APPLIED PHYSICS

Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

(2016) Sabine Alamé et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Deep traps in GaN-based structures as affecting the performance of GaN devices

(2015) Alexander Y. Polyakov et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

(2014) Farah Liyana Muhammad Khir et al.   APPLIED SURFACE SCIENCE

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

(2013) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

High quality AlGaN grown on ELO AlN/sapphire templates

(2013) U. Zeimer et al.   JOURNAL OF CRYSTAL GROWTH

Electronic surface and dielectric interface states on GaN and AlGaN

(2013) Brianna S. Eller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

(2013) Mickael Lapeyrade et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices

(2012) Adenilson J Chiquito et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Chemical structure of vanadium-based contact formation on n-AlN

(2010) S. Pookpanratana et al.   JOURNAL OF APPLIED PHYSICS

Structural and electronic properties of isostructural transition metal nitrides

(2010) M. Sahnoun et al.   PHYSICA B-CONDENSED MATTER

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

(2009) Engin Arslan et al.   JOURNAL OF APPLIED PHYSICS

Ohmic Contact to High-Aluminum-Content AlGaN Epilayers

(2009) Surendra Srivastava et al.   JOURNAL OF ELECTRONIC MATERIALS