Analysis of the row grounding technique in a memristor-based crossbar array
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Title
Analysis of the row grounding technique in a memristor-based crossbar array
Authors
Keywords
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Journal
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
Volume 46, Issue 1, Pages 122-137
Publisher
Wiley
Online
2017-11-14
DOI
10.1002/cta.2399
References
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Related references
Note: Only part of the references are listed.- History Erase Effect in a Non-Volatile Memristor
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- The Desired Memristor for Circuit Designers
- (2013) Shahar Kvatinsky et al. IEEE Circuits and Systems Magazine
- Sneak-Path Testing of Crossbar-Based Nonvolatile Random Access Memories
- (2013) Sachhidh Kannan et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy
- (2012) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
- (2012) Yexin Deng et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The 3-D Stacking Bipolar RRAM for High Density
- (2012) Yi-Chung Chen et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Memristor-based memory: The sneak paths problem and solutions
- (2012) Mohammed Affan Zidan et al. MICROELECTRONICS JOURNAL
- A ferroelectric memristor
- (2012) André Chanthbouala et al. NATURE MATERIALS
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Resistance switching memories are memristors
- (2011) Leon Chua APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies
- (2010) Jiale Liang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy
- (2008) Naveen Verma et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
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