Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress

Published 2017 View Full Article

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Title
Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 9, Pages 1252-1255
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-07-05
DOI
10.1109/led.2017.2723162

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