Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 38, Issue 9, Pages 1252-1255

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-07-05

DOI

10.1109/led.2017.2723162

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