3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology - Peeref

标题

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

作者

关键词

-

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 38, Issue 10, Pages 1417-1420

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-08-09

DOI

10.1109/led.2017.2737526

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