Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

Published 2017 View Full Article

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Title
Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 4, Pages 497-500
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-02-08
DOI
10.1109/led.2017.2662710

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