Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 38, Issue 4, Pages 497-500

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-02-08

DOI

10.1109/led.2017.2662710

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