Side-Gated In2 O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications
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Title
Side-Gated In2
O3
Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications
Authors
Keywords
-
Journal
Advanced Science
Volume 3, Issue 9, Pages 1600078
Publisher
Wiley
Online
2016-04-15
DOI
10.1002/advs.201600078
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