Side-Gated In2 O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Title
Side-Gated In2 O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications
Authors
Keywords
-
Journal
Advanced Science
Volume 3, Issue 9, Pages 1600078
Publisher
Wiley
Online
2016-04-15
DOI
10.1002/advs.201600078

Ask authors/readers for more resources

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started