Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

(2014) Ngoc Huynh Van et al.   Nanoscale

Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer

(2012) Young Tack Lee et al.   ADVANCED MATERIALS

Surface Defects-Induced p-type Conduction of Silicon Nanowires

(2011) Lin-Bao Luo et al.   Journal of Physical Chemistry C

Axial p–n Nanowire Gated Diodes as a Direct Probe of Surface-Dominated Charge Dynamics in Semiconductor Nanomaterials

(2011) Tae Woong Koo et al.   Journal of Physical Chemistry C

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

(2011) Saptarshi Das et al.   NANO LETTERS

Porous PVDF As Effective Sonic Wave Driven Nanogenerators

(2011) SeungNam Cha et al.   NANO LETTERS

A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube

(2010) Jong Yeog Son et al.   ACS Nano

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

(2010) Minghua Tang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

(2010) Jung Inn Sohn et al.   NANO LETTERS

Graphene Field-Effect Transistors with Ferroelectric Gating

(2010) Yi Zheng et al.   PHYSICAL REVIEW LETTERS

Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

(2009) L. Liao et al.   ACS Nano

Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

(2008) Hiroshi Ishiwara   CURRENT APPLIED PHYSICS

Toward Nanowire Electronics

(2008) Joerg Appenzeller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES