Impact of Radiative and Nonradiative Recombination Processes on the Efficiency-Droop Phenomenon in InxGa1−xN Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy

Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

(2016) Wei Liu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

(2016) Matthias Auf der Maur et al.   PHYSICAL REVIEW LETTERS

How to decide between competing efficiency droop models for GaN-based light-emitting diodes

(2015) Joachim Piprek   APPLIED PHYSICS LETTERS

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

(2015) Galia Pozina et al.   APPLIED PHYSICS LETTERS

InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

(2013) Shinji Saito et al.   Applied Physics Express

Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra

(2013) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Analysis of Auger Recombination for Wurtzite InGaN

(2012) Gen-ichi Hatakoshi et al.   Applied Physics Express

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

(2012) Akio Kaneta et al.   Applied Physics Express

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells

(2009) Andreas Othonos et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

(2009) Markus Maier et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

New developments in green LEDs

(2009) Matthias Peter et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Spatially separated intrinsic emission components inInxGa1−xNternary alloys

(2009) Yoichi Yamada et al.   PHYSICAL REVIEW B

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations

(2008) M. Funato et al.   JOURNAL OF APPLIED PHYSICS

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

(2008) A. Kaneta et al.   PHYSICAL REVIEW B