Article
Materials Science, Coatings & Films
Su-Hwan Choi, Hyun-Jun Jeong, TaeHyun Hong, Yong Hwan Na, Chi Kwon Park, Myung Yong Lim, Seong Hoon Jeong, Jun Hyung Lim, Jin-Seong Park
Summary: Plasma-enhanced atomic layer deposited indium oxide (InOx) films using a new liquid precursor DATI exhibit high growth efficiency and purity, making them a promising choice for indium oxide semiconductors, particularly in backplane TFTs.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Materials Science, Coatings & Films
Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji
Summary: This study demonstrated a method of semi-insulating doping In2O3 via atomic layer deposition, fabricating indium-aluminum-oxide (IAO) transistors. By controlling the concentration of Al, it achieved high current, excellent mobility, and adjustable threshold voltage by varying Al concentrations.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Chemistry, Physical
Xue Chen, Jiaxian Wan, Hao Wu, Chang Liu
Summary: Passivation of oxide-based thin film transistors still poses a challenge due to the need for thermal treatments, which can impact the transistor characteristics. By reducing the growth temperatures of passivation layers, the performance of TFTs can be maintained within an acceptable range. Among all devices, TFTs with Al2O3 PVLs deposited at 100 degrees C using H2O as oxidant exhibit high mobility, proper threshold voltage, low subthreshold swing, and excellent stability.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Yan-Kui Liang, Jing-Wei Lin, Li-Chi Peng, Yi Miao Hua, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Sai Hooi Yeong, Yu-Ming Lin, Po-Tsun Liu, Edward-Yi Chang, Chun-Hsiung Lin
Summary: In this article, enhancement-mode thin-film transistors (TFTs) with ultrathin (approximately 3 nm) amorphous indium-zinc oxide (a-IZO) channel derived from atomic layer deposition (ALD) were demonstrated. The ALD-deposited IZO channel TFT showed improved device characteristics compared to thicker IZO channels. It exhibited high field-effect channel mobility, low subthreshold gate swing, high Ion/Ioff current ratio, and stable threshold voltages after positive and negative bias stress tests.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Bo Kyoung Kim, Nuri On, Cheol Hee Choi, Min Jae Kim, Shinhyuck Kang, Jun Hyung Lim, Jae Kyeong Jeong
Summary: This study reports the fabrication of high performance polycrystalline IGTO TFTs at a low temperature of 400 degrees C. The fabricated TFTs exhibited high mobility, low threshold voltage, low subthreshold gate swing, and a high I-ON/OFF ratio. The stable behavior against external gate bias stress was attributed to the high degree of metal-oxygen lattice ordering in the crystalline IGTO TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Yoon-Seo Kim, Hye-Jin Oh, Junghwan Kim, Jun Hyung Lim, Jin-Seong Park
Summary: In this study, a single-crystal-like indium-gallium-zinc-oxide (IGZO) layer was synthesized using plasma-enhanced atomic layer deposition and stable IGZO transistors with an ultra-high mobility were fabricated. The plasma power of the reactant was controlled as an effective processing parameter by evaluating and understanding the effect of the chemical reaction of the precursors on the behavior of the residual hydrogen, carbon, and oxygen in the as-deposited films. This study found a critical relationship between the optimal plasma reaction energy, superior electrical performance, and device stability.
Article
Engineering, Electrical & Electronic
Yan-Kui Liang, Wei-Li Li, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu, Ching-Hua Chiu, Dong-Ru Hsieh, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun-Hsiung Lin
Summary: This study presents the fabrication of high-performance atomic layer deposited ultrathin Indium Zinc Oxide thin-film transistors with a short channel length. The transistors exhibit excellent electrical characteristics, including high current and optimized threshold voltage. Moreover, they demonstrate ultra-low drain-induced barrier lowering performance and good gate stability.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkil, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskela, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-Driscoll
Summary: High-performance p-type oxide thin film transistors (TFTs) have great potential for semiconductor applications, but often suffer from low hole mobility and high off-state currents. By applying a thin ALD Al2O3 passivation layer on the Cu2O channel and vacuum annealing, the TFT switching characteristics can be improved. Characterization by TEM-EDX and XPS shows that Al2O3 deposition on Cu2O reduces surface and forms a CuAlO2 interfacial layer. This, along with field-effect passivation, leads to improved TFT performance by reducing trap states and electron accumulation in the off-state.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Multidisciplinary Sciences
Jiabiao Chen, Zhaochao Liu, Xinyue Dong, Zhansheng Gao, Yuxuan Lin, Yuyu He, Yingnan Duan, Tonghuai Cheng, Zhengyang Zhou, Huixia Fu, Feng Luo, Jinxiong Wu
Summary: Ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) serve as excellent gate dielectric layers for 2D semiconductors, exhibiting high dielectric constant and large band gap. Vertically grown Bi2SiO5 can be easily transferred onto other substrates, facilitating ideal van der Waals integration with few-layer MoS2.
NATURE COMMUNICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Jung Wook Lim, Taeyoon Kim, Jieun Kim, Sun Jin Yun, Kwang Hoon Jung, Min A. Park
Summary: InxTiyO films deposited via atomic layer deposition method offer an excellent alternative to In2O3 films in TFT channels, allowing modulation of cut-off wavelength in the UV region while affecting the on-current level.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Jie Zhang, Dongqi Zheng, Zhuocheng Zhang, Adam Charnas, Zehao Lin, Peide D. D. Ye
Summary: This research presents scaled ultrathin (about 3 nm) InGaO (IGO) thin film transistors (TFTs) with high-performance characteristics. The IGO channels, derived from atomic layer deposition (ALD), have a high In/Ga atomic ratio of approximately 86:14, resulting in a high electron mobility under a thin thickness. The IGO TFTs show excellent scaling behaviors and demonstrate good electrical characteristics, making them potential candidates for back-end-of-line (BEOL)-compatible monolithic 3D integration.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abet, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono
Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.
NATURE ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
M. Isabelle Buschges, Rudolf C. Hoffmann, Anna Regoutz, Christoph Schlueter, Jorg J. Schneider
Summary: The multilayered heterostructures of In2O3, SnO2, and Al2O3 showed improved properties in thin-film transistors (TFT), with high transparency and enhanced semiconducting behavior achieved through atomic layer deposition. Incorporation of only two monolayers of Al2O3 effectively suppressed oxygen vacancies, leading to improved TFT characteristics.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Materials Science, Multidisciplinary
Jaehyun Moon, Jeong-Mu Lee, Hwan-Jae Lee, Jae-Eun Pi, Jeho Na, Seong-Deok Ahn, Seung-Youl Kang
Summary: Using a mixture of ZnOx and InOy channels produced through ALD method, all-oxide bottom-gate TFTs with optimal device properties can be fabricated. The ZnOx:InOy = 1:2 composition shows the best transfer characteristics with highest field effect mobility and lowest subthreshold swing characteristics.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Hye-In Yeom, Jingyu Kim, Guk-Jin Jeon, Jeongwoo Park, Dong Uk Han, Joohyeong Kim, Kyung Min Kim, Bonggeun Shong, Sang-Hee Ko Park
Summary: In this study, a metal-oxide semiconductor-insulator-metal (MSIM) diode was developed using atomic layer deposition-assisted interface engineering. The diode exhibited a high on-off ratio, low off-current density, and good reliability. The operation mechanism of the diode was analyzed and its conduction mechanism and energy band diagram were proposed.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Mengjiao Dong, Liyun Liao, Chensheng Li, Yingxiao Mu, Yanping Huo, Zhong-Min Su, Fushun Liang
Summary: This study investigates the influence of the polarity of polymer matrices on persistent room-temperature phosphorescence (pRTP). It is discovered that intense phosphorescence emission can be achieved in highly polar matrices such as polyacrylic acid (PAA). The dipole-dipole interaction between the polar fluorophore and polar matrix is proposed to stabilize the excited state and facilitate the generation of efficient room-temperature phosphorescence emissions.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Han-Jiang Yang, Weijia Xiang, Xiangzhou Zhang, Jin-Yun Wang, Liang-Jin Xu, Zhong-Ning Chen
Summary: This article reports a 2D copper(I)-based cluster material for X-ray imaging, which exhibits ultra-high spatial resolution, high photoluminescence efficiency, and low detection limit. The material shows excellent linear response to X-ray dose rates and light output, and has the best spatial resolution among reported lead-free metal halide hybrids.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Review
Materials Science, Multidisciplinary
Taek Joon Kim, Sang-hun Lee, Dayeong Kwon, Jinsoo Joo
Summary: Donor-acceptor heterostructures using organic-inorganic halide perovskites, two-dimensional transition metal dichalcogenides, pi-conjugated organic small/macro molecules, and quantum dots are promising platforms for exciton-based photonics and optoelectronics. Hetero-interlayer excitons and hetero-intermolecular excitons formed through optical and/or electrical charge transfer in various heterostructures are important quasi-particles for light emission, detection, and harvesting systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Liemao Cao, Xiaohui Deng, Zhen-kun Tang, Rui Tan, Yee Sin Ang
Summary: We investigate the interface properties between WSi2N4 and Mo2B, O-modified Mo2B, and OH-modified Mo2B nanosheets. We find that WSi2N4 and Mo2B form n-type Schottky contacts, while functionalizing Mo2B with O and OH leads to the formation of both n-type and p-type ohmic contacts with WSi2N4. Additionally, we demonstrate the emergence of quasi-ohmic contact with ultralow lateral Schottky barrier and zero vertical interfacial tunneling barriers in Mo2B(OH)2-contacted WSi2N4.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Ga Eun Kim, Hae-Jin Kim, Heesuk Jung, Minwoo Park
Summary: This study presents a solution to the commercialization challenges of flexible LEDs based on MAPbBr(3) by incorporating polyurethane and an In-Ga-Zn-Sn liquid alloy. The designed devices showed high flexibility, efficiency, and durability, with improved electron injection and reduced defects, making them promising for next-generation displays.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Tao Shen, Zeng Wu, Zhen Jiang, Dongsheng Yan, Yan Zhao, Yang Wang, Yunqi Liu
Summary: Sidechain engineering is an important molecular design strategy for tuning the solid-state packing and structural ordering of conjugated polymers. The effects of sidechain direction on the optoelectronic properties of polymers and device performance were systematically investigated in this study. The results demonstrate that tuning the sidechain substitution direction can effectively improve the molecular structure and light absorption properties of polymers, providing new insights for the rational design of functional polymers.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Lotte Clinckemalie, Bapi Pradhan, Roel Vanden Brande, Heng Zhang, Jonathan Vandenwijngaerden, Rafikul Ali Saha, Giacomo Romolini, Li Sun, Dirk Vandenbroucke, Mischa Bonn, Hai I. Wang, Elke Debroye
Summary: In this study, a facile strategy using a non-conductive polymer was proposed to fabricate stable, pinhole-free thick films. The effect of introducing a second phase into CsPbBr3 perovskite crystals on their photophysical properties and charge transport was investigated. The dual phase devices exhibited improved stability and more effective operation at higher voltages in X-ray detection.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Jingye Zou, Shenglan Hao, Pascale Gemeiner, Nicolas Guiblin, Omar Ibder, Brahim Dkhil, Charles Paillard
Summary: When rare-earth ions are embedded in a ferroelectric material, their photoluminescence can serve as an all-optical probe for temperature, electric field, and mechanical stimulus. However, the impact of ferroelectric phase transitions on photoluminescence is not well understood. In this study, we demonstrate changes in the photoluminescence of green emission bands during critical ferroelectric transitions in an Er-doped BaTiO3 material. We also find that the intensity ratio and wavelength position difference of sub-peaks provide information on the phase transitions.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Jiangchao Han, Daming Zhou, Wei Yang, Chen Lv, Xinhe Wang, Guodong Wei, Weisheng Zhao, Xiaoyang Lin, Shengbo Sang
Summary: Rare type-II spin-gapless semiconductors (SGSs) have attracted increasing attention due to their unique spin properties. In this study, the interface contacts and spin transport properties of different devices composed of VSi2P4 ferromagnetic layers were investigated. The results show that VSi2P4 is a promising material for designing vertical van der Waals heterostructures with a giant tunnel magnetoresistance (TMR) in spintronic applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Tianqi Zhao, Renagul Abdurahman, Qianting Yang, Ruxiangul Aiwaili, Xue-Bo Yin
Summary: In this study, we designed and prepared Cr and Ba-doped gamma-Ga2O3 nanoparticles to achieve near-infrared emission and enhance the emission intensity. The emission mechanism was proposed based on the trap depth, band gap, and energy levels of Cr ions. The ratiometric temperature sensing and encryption information transfer demonstrated the potential applications of this technology.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Shuvankar Gupta, Jyotirmoy Sau, Manoranjan Kumar, Chandan Mazumdar
Summary: In this study, a new spin-gapless semiconductor material CoFeMnSn is reported, and its stable structure and spin-polarized band structure are determined through experimental realization and theoretical calculations. The compound exhibits a high ferromagnetic transition temperature, making it excellent for room temperature applications. The nearly temperature-independent resistivity, conductivity, and carrier concentration of the compound, adherence to the Slater-Pauling rule, and the high intrinsic anomalous Hall conductivity achieved through hole doping further confirm its spin-gapless semiconductor nature. Additionally, the compound's SGS and topological properties make it suitable for spintronics and magneto-electronics devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Ikumi Aratani, Yoji Horii, Yoshinori Kotani, Hitoshi Osawa, Hajime Tanida, Toshiaki Ina, Takeshi Watanabe, Yohko F. Yano, Akane Mizoguchi, Daisuke Takajo, Takashi Kajiwara
Summary: In this study, two-dimensional arrays of single-molecule magnets (SMMs) based on metal-organic frameworks (MOFs) were systematically modified through Langmuir-Blodgett methods and chemical modifications. The introduction of bulky alkoxide groups induced structural changes and perpendicular magnetic anisotropy. This research provides a promising strategy for the construction of high-density magnetic memory devices using molecular spintronics.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Zonghao Lei, Houhe Dong, Lijie Sun, Bing Teng, Yanfei Zou, Degao Zhong
Summary: Researchers have successfully developed four different up-conversion phosphors based on the Eulytite-type host Ba3Yb(PO4)(3). The optical temperature sensing properties of these phosphors were thoroughly investigated, and it was found that Ba3Yb(PO4)(3):Tm/Er/Ho showed potential for optical temperature measurement applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
C. Roncero-Barrero, M. A. Carvajal, J. Ribas-Arino, I. de P. R. Moreira, M. Deumal
Summary: This study computationally investigates the conductivity of four isostructural compounds with different Se contents, and reveals the parameters that define their conductivity in stable organic radical materials. The results provide insights into the influence of Se content on the conductivity and highlight the importance of considering multiple parameters in understanding the trends in conductivity.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Remi Arras, Kedar Sharma, Lionel Calmels
Summary: In this study, we investigated the interplay between structural defects in NiFe2O4, showing that the complex formed by a Ni-Oh/Fe-Td-cation swap and a neutral oxygen vacancy is more stable than these two isolated defects, and significantly reduces the width of the minority-spin band gap.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)