Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique

Title
Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 10, Pages 103506
Publisher
AIP Publishing
Online
2008-03-12
DOI
10.1063/1.2891081

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search