Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents

(2015) Daesung Kang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Big Data of Materials Science: Critical Role of the Descriptor

(2015) Luca M. Ghiringhelli et al.   PHYSICAL REVIEW LETTERS

Materials Prediction via Classification Learning

(2015) Prasanna V. Balachandran et al.   Scientific Reports

Designing rules and probabilistic weighting for fast materials discovery in the Perovskite structure

(2014) I E Castelli et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

(2013) Tom J. Badcock et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Accelerating materials property predictions using machine learning

(2013) Ghanshyam Pilania et al.   Scientific Reports

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation

(2013) Anubhav Jain et al.   APL Materials

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

(2012) Guan-Bo Lin et al.   APPLIED PHYSICS LETTERS

Information-Theoretic Regret Bounds for Gaussian Process Optimization in the Bandit Setting

(2012) Niranjan Srinivas et al.   IEEE TRANSACTIONS ON INFORMATION THEORY

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

(2012) X. Li et al.   JOURNAL OF APPLIED PHYSICS

Finding Nature’s Missing Ternary Oxide Compounds Using Machine Learning and Density Functional Theory

(2010) Geoffroy Hautier et al.   CHEMISTRY OF MATERIALS

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

The LED's dark secret

(2009) Richard Stevenson   IEEE SPECTRUM

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS