Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
出版年份 2016 全文链接
标题
Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-04-26
DOI
10.1038/srep24862
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Improving output power performance of InGaN-based light-emitting diodes by employing step-down indium contents
- (2015) Daesung Kang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Big Data of Materials Science: Critical Role of the Descriptor
- (2015) Luca M. Ghiringhelli et al. PHYSICAL REVIEW LETTERS
- Materials Prediction via Classification Learning
- (2015) Prasanna V. Balachandran et al. Scientific Reports
- Designing rules and probabilistic weighting for fast materials discovery in the Perovskite structure
- (2014) I E Castelli et al. MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
- Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
- (2013) Tom J. Badcock et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
- (2013) Justin Iveland et al. PHYSICAL REVIEW LETTERS
- Accelerating materials property predictions using machine learning
- (2013) Ghanshyam Pilania et al. Scientific Reports
- Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
- (2013) Anubhav Jain et al. APL Materials
- Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
- (2012) Guan-Bo Lin et al. APPLIED PHYSICS LETTERS
- Information-Theoretic Regret Bounds for Gaussian Process Optimization in the Bandit Setting
- (2012) Niranjan Srinivas et al. IEEE TRANSACTIONS ON INFORMATION THEORY
- Impact of active layer design on InGaN radiative recombination coefficient and LED performance
- (2012) X. Li et al. JOURNAL OF APPLIED PHYSICS
- Finding Nature’s Missing Ternary Oxide Compounds Using Machine Learning and Density Functional Theory
- (2010) Geoffroy Hautier et al. CHEMISTRY OF MATERIALS
- Microstructural origins of localization in InGaN quantum wells
- (2010) R A Oliver et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
- (2009) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
- The LED's dark secret
- (2009) Richard Stevenson IEEE SPECTRUM
- Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
- (2008) Aurélien David et al. APPLIED PHYSICS LETTERS
- On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
- (2008) Jinqiao Xie et al. APPLIED PHYSICS LETTERS
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