Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Title
Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes
Authors
Keywords
-
Journal
Chinese Physics B
Volume 24, Issue 3, Pages 038503
Publisher
IOP Publishing
Online
2015-02-26
DOI
10.1088/1674-1056/24/3/038503

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