Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

标题
Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes
作者
关键词
-
出版物
Chinese Physics B
Volume 24, Issue 3, Pages 038503
出版商
IOP Publishing
发表日期
2015-02-26
DOI
10.1088/1674-1056/24/3/038503

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