Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

(2015) Anne Siemon et al.   ADVANCED FUNCTIONAL MATERIALS

16 Boolean logics in three steps with two anti-serially connected memristors

(2015) Yaxiong Zhou et al.   APPLIED PHYSICS LETTERS

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

Magnetic non-volatile flip-flop with spin-Hall assistance

(2015) Zhaohao Wang et al.   Physica Status Solidi-Rapid Research Letters

Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

(2015) Shuang Gao et al.   Scientific Reports

A HfO2-Based Complementary Switching Crossbar Adder

(2015) Thomas Breuer et al.   Advanced Electronic Materials

Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics

(2014) Tiangui You et al.   ADVANCED FUNCTIONAL MATERIALS

Exchange bias field induced symmetry-breaking of magnetization rotation in two-dimension

(2014) B. Cui et al.   APPLIED PHYSICS LETTERS

Data-intensive applications, challenges, techniques and technologies: A survey on Big Data

(2014) C.L. Philip Chen et al.   INFORMATION SCIENCES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

(2014) D. L. Li et al.   Scientific Reports

Logic Computation in Phase Change Materials by Threshold and Memory Switching

(2013) M. Cassinerio et al.   ADVANCED MATERIALS

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

(2013) N. D. Rizzo et al.   IEEE TRANSACTIONS ON MAGNETICS

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

(2013) Y. Li et al.   JOURNAL OF APPLIED PHYSICS

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

(2013) Matthias Althammer et al.   PHYSICAL REVIEW B

Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

(2013) H. Nakayama et al.   PHYSICAL REVIEW LETTERS

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory

(2013) Hiwa Mahmoudi et al.   SOLID-STATE ELECTRONICS

A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor

(2012) Mirko Prezioso et al.   ADVANCED MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Reduction and oxidation of SrCoO2.5 thin films at low temperatures

(2012) Noriya Ichikawa et al.   DALTON TRANSACTIONS

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

(2012) E Linn et al.   NANOTECHNOLOGY

Robust multicellular computing using genetically encoded NOR gates and chemical ‘wires’

(2010) Alvin Tamsir et al.   NATURE

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Materials for Magnetoresistive Random Access Memory

(2009) J.M. Slaughter   Annual Review of Materials Research

Temperature dependence of giant tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions

(2008) S. G. Wang et al.   PHYSICAL REVIEW B