Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
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Title
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
Authors
Keywords
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Journal
Nanoscale
Volume 8, Issue 5, Pages 2589-2593
Publisher
Royal Society of Chemistry (RSC)
Online
2016-01-14
DOI
10.1039/c5nr08219f
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- (2015) Michele Buscema et al. CHEMICAL SOCIETY REVIEWS
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- Control of biaxial strain in single-layer molybdenite using local thermal expansion of the substrate
- (2015) Gerd Plechinger et al. 2D Materials
- Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study
- (2014) David M. Guzman et al. JOURNAL OF APPLIED PHYSICS
- Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain
- (2014) Hongyan Guo et al. Journal of Physical Chemistry C
- Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2
- (2014) Sujay B. Desai et al. NANO LETTERS
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- (2014) H. Fang et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
- (2013) Sheneve Z. Butler et al. ACS Nano
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- (2013) Hiram J. Conley et al. NANO LETTERS
- Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2
- (2013) Keliang He et al. NANO LETTERS
- Local Strain Engineering in Atomically Thin MoS2
- (2013) Andres Castellanos-Gomez et al. NANO LETTERS
- MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field
- (2013) Ning Lu et al. Nanoscale
- Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
- (2013) Philipp Tonndorf et al. OPTICS EXPRESS
- Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2
- (2013) Hongliang Shi et al. PHYSICAL REVIEW B
- Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
- (2013) M. Ghorbani-Asl et al. PHYSICAL REVIEW B
- Anomalous Raman spectra and thickness-dependent electronic properties of WSe2
- (2013) H. Sahin et al. PHYSICAL REVIEW B
- Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2monolayers under strain
- (2013) Chung-Huai Chang et al. PHYSICAL REVIEW B
- Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2
- (2013) S. Horzum et al. PHYSICAL REVIEW B
- Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains
- (2012) Priya Johari et al. ACS Nano
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
- (2012) Sefaattin Tongay et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Strain-engineered artificial atom as a broad-spectrum solar energy funnel
- (2012) Ji Feng et al. Nature Photonics
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Photoluminescence from Chemically Exfoliated MoS2
- (2011) Goki Eda et al. NANO LETTERS
- Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
- (2011) Emilio Scalise et al. Nano Research
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation
- (2009) T. M. G. Mohiuddin et al. PHYSICAL REVIEW B
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