MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet

(2013) Yeung Yu Hui et al.   ACS Nano

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Recent advances in free-standing two-dimensional crystals with atomic thickness: design, assembly and transfer strategies

(2013) Xiaodong Zhang et al.   CHEMICAL SOCIETY REVIEWS

Computational Search for Single-Layer Transition-Metal Dichalcogenide Photocatalysts

(2013) Houlong L. Zhuang et al.   Journal of Physical Chemistry C

Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization

(2013) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Electronic Structural Moiré Pattern Effects on MoS2/MoSe2 2D Heterostructures

(2013) Jun Kang et al.   NANO LETTERS

Self-modulated band gap in boron nitride nanoribbons and hydrogenated sheets

(2013) Zhuhua Zhang et al.   Nanoscale

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

(2013) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Electronic properties of the MoS2-WS2heterojunction

(2013) K. Kośmider et al.   PHYSICAL REVIEW B

Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

(2013) Humberto Terrones et al.   Scientific Reports

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2

(2012) Yungang Zhou et al.   ACS Nano

Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties

(2012) Yandong Ma et al.   ACS Nano

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Large-Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions

(2011) Ronan J. Smith et al.   ADVANCED MATERIALS

Strain Induced Band Dispersion Engineering in Si Nanosheets

(2011) Chao Zhang et al.   Journal of Physical Chemistry C

Metallic Few-Layered VS2Ultrathin Nanosheets: High Two-Dimensional Conductivity for In-Plane Supercapacitors

(2011) Jun Feng et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Graphene adhesion on MoS2 monolayer: An ab initio study

(2011) Yandong Ma et al.   Nanoscale

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Van der Waals density functionals applied to solids

(2011) Jiří Klimeš et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Accurate band structures and effective masses for InP, InAs, and InSb using hybrid functionals

(2009) Yoon-Suk Kim et al.   PHYSICAL REVIEW B

MoS2Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

(2008) Yafei Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Energy-gap modulation of BN ribbons by transverse electric fields: First-principles calculations

(2008) Zhuhua Zhang et al.   PHYSICAL REVIEW B