Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Defects in Phosphorene

(2015) Wei Hu et al.   Journal of Physical Chemistry C

Edge reconstruction in armchair phosphorene nanoribbons revealed by discontinuous Galerkin density functional theory

(2015) Wei Hu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Scaling laws of band gaps of phosphorene nanoribbons: A tight-binding calculation

(2015) Esmaeil Taghizadeh Sisakht et al.   PHYSICAL REVIEW B

Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

(2015) M. Poljak et al.   SOLID-STATE ELECTRONICS

Ambipolar Phosphorene Field Effect Transistor

(2014) Saptarshi Das et al.   ACS Nano

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene Nanoribbons

(2014) Nima Djavid et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

(2014) Yann-Michel Niquet et al.   JOURNAL OF APPLIED PHYSICS

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

(2014) Hongyan Guo et al.   Journal of Physical Chemistry C

Tunable Transport Gap in Phosphorene

(2014) Saptarshi Das et al.   NANO LETTERS

Strain and Orientation Modulated Bandgaps and Effective Masses of Phosphorene Nanoribbons

(2014) Xiaoyu Han et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Topological origin of quasi-flat edge band in phosphorene

(2014) Motohiko Ezawa   NEW JOURNAL OF PHYSICS

Ab initiostudies of thermodynamic and electronic properties of phosphorene nanoribbons

(2014) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Scaling laws for the band gap and optical response of phosphorene nanoribbons

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus

(2014) A. N. Rudenko et al.   PHYSICAL REVIEW B

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(2013) N. R. Pradhan et al.   APPLIED PHYSICS LETTERS

Influence of substrate type and quality on carrier mobility in graphene nanoribbons

(2013) M. Poljak et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons

(2013) M. Poljak et al.   SOLID-STATE ELECTRONICS

Influence of Edge Defects, Vacancies, and Potential Fluctuations on Transport Properties of Extremely Scaled Graphene Nanoribbons

(2012) Mirko Poljak et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons

(2011) Alessandro Betti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons

(2011) Arash Yazdanpanah et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

(2008) T. Skotnicki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling disorder in graphene

(2008) Vitor M. Pereira et al.   PHYSICAL REVIEW B

Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

(2008) Tian Fang et al.   PHYSICAL REVIEW B

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS