Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers

(2022) Abhiram Gundimeda et al.   JOURNAL OF APPLIED PHYSICS

Epitaxial Growth of Metastable Semiconductor Alloys

(2021) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Current status and future developments of the ion beam facility at the centre of micro-analysis of materials in Madrid

(2021) A. Redondo-Cubero et al.   European Physical Journal Plus

Multi-junction solar cells paving the way for super high-efficiency

(2021) Masafumi Yamaguchi et al.   JOURNAL OF APPLIED PHYSICS

A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates

(2021) Karim Ben Saddik et al.   APL Materials

Highly Mismatched Semiconductor Alloys: From Atoms to Devices

(2020) Wladyslaw Walukiewicz et al.   JOURNAL OF APPLIED PHYSICS

Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

(2020) C. Cornet et al.   Physical Review Materials

Alloy segregation at stacking faults in zincblende GaN heterostructures

(2020) B. Ding et al.   JOURNAL OF APPLIED PHYSICS

Terahertz pulse emission from GaInAsBi

(2019) V. Pačebutas et al.   JOURNAL OF APPLIED PHYSICS

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

(2019) Alexey D. Bolshakov et al.   CRYSTAL GROWTH & DESIGN

Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys

(2019) Zoe L. Bushell et al.   Scientific Reports

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

(2019) E. Luna et al.   JOURNAL OF APPLIED PHYSICS

Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

(2019) K. Ben Saddik et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous nanostructure formation in GaAsBi alloys

(2018) C. Ryan Tait et al.   JOURNAL OF CRYSTAL GROWTH

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

(2018) Arto Aho et al.   PROGRESS IN PHOTOVOLTAICS

Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem

(2018) K. Kharel et al.   JOURNAL OF APPLIED PHYSICS

Progress Toward III–V Bismide Alloys for Near- and Midinfrared Laser Diodes

(2017) Igor P. Marko et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

(2017) N. V. Kryzhanovskaya et al.   SEMICONDUCTORS

Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

(2017) Jing Li et al.   Scientific Reports

Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

(2016) S. Almosni et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

(2014) H Jussila et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

(2014) Alain Rolland et al.   OPTICAL AND QUANTUM ELECTRONICS

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

(2014) Alexander Gubanov et al.   Nanoscale Research Letters

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1−xOx(Y= S, Se, Te) semiconductors by first-principles calculations

(2013) Kong-Ping Wu et al.   Chinese Physics B

Strain-compensated GaPN/GaP heterostructure on (0 0 1) silicon substrates for intermediate band solar cells

(2013) S Nagarajan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Intermediate-band photovoltaic solar cell based on ZnTe:O

(2009) Weiming Wang et al.   APPLIED PHYSICS LETTERS

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

(2009) T. J. Grassman et al.   APPLIED PHYSICS LETTERS

III–V epitaxy on Si for photonics applications

(2008) Hiroo Yonezu et al.   JOURNAL OF CRYSTAL GROWTH