Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Published 2019 View Full Article

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Title
Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 126, Issue 10, Pages 105704
Publisher
AIP Publishing
Online
2019-09-10
DOI
10.1063/1.5111090
References
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