Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-Compatible MTJ Stacks

Multi-state MRAM cells for hardware neuromorphic computing

(2022) Piotr Rzeszut et al.   Scientific Reports

Opportunities and challenges for spintronics in the microelectronics industry

(2020) B. Dieny et al.   Nature Electronics

Surface smoothing process for high-performance MgO-based magnetic tunnel junctions

(2019) Atsushi Sugihara et al.   Applied Physics Express

Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction

(2019) Hyeonwoo Park et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors

(2019) Zicong Lei et al.   AIP Advances

Spin-Structured Multilayers: A New Class of Materials for Precision Spintronics

(2016) Kai Schlage et al.   ADVANCED FUNCTIONAL MATERIALS

Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

(2016) M. Zhu et al.   JOURNAL OF APPLIED PHYSICS

The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions

(2015) Min-Su Jeon et al.   Nanoscale

Study of ultrathin magnetic cobalt films on MgO(001)

(2012) Gagan Sharma et al.   JOURNAL OF APPLIED PHYSICS

Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction

(2012) V. B. Naik et al.   AIP Advances

First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces

(2011) H. X. Yang et al.   PHYSICAL REVIEW B

Correlation Between Perpendicular Anisotropy and Magnetoresistance in Magnetic Tunnel Junctions

(2010) Lavinia Elena Nistor et al.   IEEE TRANSACTIONS ON MAGNETICS

Magnetic Domain-Wall Racetrack Memory

(2008) S. S. P. Parkin et al.   SCIENCE