Journal
AIP ADVANCES
Volume 9, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5117320
Keywords
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Funding
- National Natural Science Foundation of China [61627813]
- International Collaboration Project [B16001]
- VR innovation platform from Qingdao Science and Technology Commission
- Singulus
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We systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the highest tunneling magnetoresistance (TMR) ratio of as high as 80.5% and 53.7% with perpendicular and in-plane magnetic field, respectively, while the resistance-area product (RA) reaches also highest value of 21.1 Omega*mu m(2). The thickness range of CoFeB to obtain perpendicular magnetic anisotropy (PMA) is determined. The variation of the magnetic moment of free layer indicates that the three-dimensional (3D) sensors can be designed by varying the thickness of the free layer and be controlled by the perpendicular and in-plane components through annealing under the in-plane magnetic field. (C) 2019 Author(s).
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